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UD606 - Power MOSFET

General Description

The UD606 can provide excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs.

The UD606 may be used in H-bridge, inverters and other applications.

Key Features

  • S.
  • N-Channel: 40V/8A RDS(ON) ≤ 33 mΩ @ VGS =10V, ID=8.0A RDS(ON) ≤ 55 mΩ @ VGS= 4.5V, ID=6.0A.
  • P-Channel: -40V/-8A RDS(ON) ≤ 50 mΩ @ VGS= -10V, ID=-8.0A RDS(ON) ≤ 70 mΩ @ VGS= -4.5V, ID=-4.0A.
  • Super high dense cell design.
  • Reliable and rugged.
  • SYMBOL 1 1 SOP-8 TO-252-5 PDFN5×6.

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Full PDF Text Transcription (Reference)

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UNISONIC TECHNOLOGIES CO., LTD UD606 DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) Power MOSFET  DESCRIPTION The UD606 can provide excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs. The UD606 may be used in H-bridge, inverters and other applications.  FEATURES * N-Channel: 40V/8A RDS(ON) ≤ 33 mΩ @ VGS =10V, ID=8.0A RDS(ON) ≤ 55 mΩ @ VGS= 4.5V, ID=6.0A * P-Channel: -40V/-8A RDS(ON) ≤ 50 mΩ @ VGS= -10V, ID=-8.0A RDS(ON) ≤ 70 mΩ @ VGS= -4.5V, ID=-4.