UD606 Description
The UD606 can provide excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs. The UD606 may be used in H-bridge, inverters and other applications.
UD606 Key Features
- N-Channel: 40V/8A RDS(ON) ≤ 33 mΩ @ VGS =10V, ID=8.0A RDS(ON) ≤ 55 mΩ @ VGS= 4.5V, ID=6.0A
- P-Channel: -40V/-8A RDS(ON) ≤ 50 mΩ @ VGS= -10V, ID=-8.0A RDS(ON) ≤ 70 mΩ @ VGS= -4.5V, ID=-4.0A
- Super high dense cell design
- Reliable and rugged
- SYMBOL
- ORDERING INFORMATION
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