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UD8N04Z Datasheet PDF

Unisonic Technologies UD8N04Z

UD8N04Z is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with an extremely low on-state resistance and superior switching performance. The UTC UD8N04Z is suitable for high frequency DC-DC converters with synchronous rectification applications.
Part No. UD8N04Z
Datasheet UD8N04Z Download
Manufacturer
Unisonic Technologies
Description N-CHANNEL MOSFET
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UD8N04Z datasheet page 1 preview

DESCRIPTION

The UTC
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FEATURES

* RDS(ON) ≤ 85 mΩ @ VGS=10V, ID=5.2A RDS(ON) ≤ 112 mΩ @ VGS=4.5V, ID=4.0A * High Power and Current Handling Capability * High Cell Density Trench Technology
● SYMBOL POWER MOSFET SOP-8
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UD8N04ZL-S08-R UD8N04ZG-S08-R SOP-8 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1234567 8 Packing S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 8 QW-R209-258.E UD8N04Z
● MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 8 QW-R209-258.E UD8N04Z Power MOSFET
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ABSOLUTE MAXIMUM RATINGS

(TA=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 40 V Gate-Source Voltage Continuous Drain Current Continuous VGSS ID ±12 5.2 V A Pulsed Drain Current (Note 2) Power Dissipation (Note 3) Pulsed IDM PD 8A 1.47 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
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