Unisonic Technologies UDF015N120
UDF015N120 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.| Part No. | UDF015N120 |
|---|---|
| Datasheet | UDF015N120 Download |
| Manufacturer |  Unisonic Technologies |
| Description | 1200V N-CHANNEL DEPLETION-MODE POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 500 Ω @ VGS=0V, ID=75mA * High Switching Speed● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free UDF015N120L-AA3-R UDF015N120G-AA3-R UDF015N120L-T92-B UDF015N120G-T92-B UDF015N120L-T92-K UDF015N120G-T92-K Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-223 TO-92 TO-92 Pin Assignment 1 2 3 G D S G D S G D S Packing Tape Reel Tape Box Bulk UDF015N120G-AA3-R (1)Packing Type (2)Package Type (3)Green Package (1) R: Tape Reel, B: Tape Box, K: Bulk (2) AA3: SOT-223, T92: TO-92 (3) G: Halogen Free and Lead Free, L: Lead Free
● MARKING SOT-223 TO-92 Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-D146.a UDF015N120 Advance Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (Note 2) VDSS 1200 V Drain-Gate Voltage (Note 2) VDGX 1200 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous ID Pulsed IDM 0.15 A 0.3 A Power Dissipation SOT-223 TO-92 PD 0.8 W 0.625 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
