UDN302 Datasheet PDF | Unisonic Technologies

Unisonic Technologies UDN302

The UDN302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.

Part No.	UDN302
Datasheet	UDN302 Download
Manufacturer	Unisonic Technologies
Description	Power MOSFET
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DESCRIPTION

FEATURES

* RDS(ON)=55mΩ @ VGS=-4.5V * RDS(ON)=80mΩ @ VGS=-2.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 3.Drain Power MOSFET 2.Gate 1.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UDN302L-AE3-R UDN302G-AE3-R Package SOT-23 Pin Assignment 123 SGD Packing Tape Reel MARKING NC03 L: Lead Free G: Halogen Free Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-278.B UDN302 Power MOSFET

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS -20 V VGSS ±12 V Continuous Drain Current Pulsed Drain Current ID -2.4 A IDM -10 A Maximum Power Dissipation PD 0.5 Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note:Absolute maximum ratings are those values beyond which the device could be permanently damaged. W ℃ ℃ Absolute maximum ratings are stress ratings only and functional device operat...