Unisonic Technologies UF2N30Z
UF2N30Z is an N -channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance.| Part No. | UF2N30Z |
|---|---|
| Datasheet | UF2N30Z Download |
| Manufacturer |  Unisonic Technologies |
| Description | 2A 300V N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Power MOSFET The U TC 1 SOT-223●
FEATURES
* R DS(ON) <2Ω @ V GS =10V, I D =2A * High switching speed * Typically 3.2nC low gate charge * 100% avalanche tested● SYMBOL 2.Drain 1.Gate 3.Source
● ORDERING INFORMATION 1 G Pin Assignment 2 3 D S Packing Tape Reel Ordering Number Package Lead Free Halogen Free UF2N30ZL-AA3-R UF2N30ZG-AA3-R SOT-223 Note: Pin Assignment: G: Gate D: Drain S: Source UF2N30ZL-AA3-R (1)Packing Type (2)Package Type (3)Lead Free (1) R: Tape Reel (2) AA3: SOT-223 (3) L: Lead Free, G: Halogen Free Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-761.B UF2N30Z
● Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL RATINGS UNIT V DSS 300 V V GSS ±20 V Continuous ID 2 A Continuous Drain Current Pulsed I DM 8 A Avalanche Energy E AS 52 mJ Power Dissipation PD 2 W Junction Temperature TJ +150 °C Storage Temperature Range T STG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
