UF3N30 Datasheet PDF | Unisonic Technologies

Unisonic Technologies UF3N30

UF3N30 is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance.

Part No.	UF3N30
Datasheet	UF3N30 Download
Manufacturer	Unisonic Technologies
Description	300V N-CHANNEL POWER MOSFET
Buy	Stock & Price

DESCRIPTION

The UTC

FEATURES

* RDS(ON)<2Ω @ VGS=10V, ID=3A * High switching speed * Typically 4nC low gate charge * 100% avalanche tested SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF3N30L-TM3-R UF3N30G-TM3-R Package TO-251 TO-252 S: Source 1 G G Pin Assignment 2 3 D S D S Packing Tape Reel Tape Reel UF3N30L-TN3-R UF3N30G- TN3-R Note: Pin Assignment: G: Gate D: Drain Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-826.a Datasheet pdf - UF3N30 PARAMETER Drain-Source Voltage Gate-Source Voltage Preliminary Power MOSFET

ABSOLUTE MAXIMUM RATINGS

SYMBOL RATINGS UNIT VDSS 300 V VGSS ±20 V Continuous ID 3 A Continuous Drain Current 12 A Pulsed IDM Avalanche Energy EAS 52 mJ Power Dissipation PD 50 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device ope...