Unisonic Technologies UF640-P
The UF640-P suitable for resonant and PWM converter topologies.| Part No. | UF640-P |
|---|---|
| Datasheet | UF640-P Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications.●
FEATURES
* RDS(ON) =0.18Ω@ VGS=10V, ID=10A * Ultra Low gate charge (typical 43nC) * Low reverse transfer capacitance (CRSS = typical 100 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness● SYMBOL 1 Power MOSFET TO-220
● ORDERING INFORMATION Ordering Number Lead Free Halogen-Free UF640L-TA3-T UF640G-TA3-T Package TO-220 Pin Assignment 123 GDS Packing Tube Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-Q17.A UF640-P Power MOSFET
● ABSOLUTE MAXIMUM RATING (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Drain-Gate Voltage (RGS=20kΩ) VDSS VDGR 200 V 200 V Gate-Source Voltage Continuous Drain Current VGSS ID ±20 V 18 A Pulsed Drain C...
