UF730 Key Features
- RDS(ON) = 1Ω@VGS = 10 V
- Avalanche Energy Specified
- Rugged
- SOA is Power Dissipation Limited
- Fast Switching Capability
- Linear Transfer Characteristics
- High Input Impedance
- SYMBOL
- ORDERING INFORMATION
- Part: UF730
- Manufacturer: Unisonic Technologies (official site)
- Size: 337.96 KB
Other UF730 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Unisonic Technologies |
UF730-E | N-CHANNEL POWER MOSFET |
UF730 Description
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.