Datasheet Details
| Part number | UF730 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 337.96 KB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet |
 UF730 Datasheet
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General Description
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
Key Features
- S.
- RDS(ON) = 1Ω@VGS = 10 V.
- Avalanche Energy Specified.
- Rugged - SOA is Power Dissipation Limited.
- Fast Switching Capability.
- Linear Transfer Characteristics.
- High Input Impedance.
- SYMBOL 1 1 1 1 TO-252 TO-251 TO-220 TO-220F.
