UF730 Datasheet PDF | Unisonic Technologies

Unisonic Technologies UF730

The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

Part No.	UF730
Datasheet	UF730 Download
Manufacturer	Unisonic Technologies
Description	N-CHANNEL POWER MOSFET
Buy	Stock & Price

DESCRIPTION

FEATURES

* RDS(ON) = 1Ω@VGS = 10 V * Avalanche Energy Specified * Rugged - SOA is Power Dissipation Limited * Fast Switching Capability * Linear Transfer Characteristics * High Input Impedance SYMBOL 1 1 1 1 TO-252 TO-251 TO-220 TO-220F ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF730L-TA3-T UF730G-TA3-T UF730L-TF3-T UF730G-TF3-T UF730L-TM3-T UF730G-TM3-T UF730L-TN3-R UF730G-TN3-R UF730L-TN3-T UF730G-TN3-T Package TO-220 TO-220F TO-251 TO-252 TO-252 Pin Assignment 1 2 3 GD S GD S GD S GD S GD S Packing Tube Tube Tube Tape Reel Tube Copyright © 2010 Unisonic Technologies Co., Ltd. 1 of 6 QW-R502-077.E UF730 Power MOSFET

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 400 V Drain-Gate Voltage (RGS = 20kΩ) (TJ =25°C ~125°C) VDGR 400 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 5.5 A Pulsed Drain Current (Note 1) IDM 22 A Single Pulse Avalanche Energy (Note 2) EAS 3...