UF740
Description
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
Key Features
- 10A, 400V, RDS(ON)(0.55Ω)
- Single Pulse Avalanche Energy Rated
- Rugged - SOA is Power Dissipation Limited
- Fast Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- SYMBOL 2.Drain
