UF840-F Description
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
UF840-F Key Features
- Low RDS(ON)< 0.87Ω @ VGS=10V. ID = 4.4A
- Single Pulse Avalanche Energy Rated
- Fast Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- SYMBOL
- ORDERING INFORMATION
- MARKING