Unisonic Technologies UFC8N80
The UTC UFC8N80 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.| Part No. | UFC8N80 |
|---|---|
| Datasheet | UFC8N80 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
* RDS(ON) < 1.7 Ω @ VGS=10V, ID=4.0A * Fast Switching Capability * Avalanche Energy Specified● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UFC8N80L-TA3-T UFC8N80G-TA3-T TO-220 UFC8N80L-TF1-T UFC8N80G-TF1-T TO-220F1 UFC8N80L-TF3-T UFC8N80G-TF3-T TO-220F Note: Pin Assignment: G: Gate C: Collector E: Emitter Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tube
● MARKING Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 5 QW-R205-422.B UFC8N80 Power MOSFET
●
ABSOLUTE MAXIMUM RATINGS
(TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) VDSS VGSS ID IDM EAS dv/dt 800 V ±30 V 8A 16 A 136 mJ 1.6 V/ns Power Dissipation TO-220 TO-220F/TO-220F1 PD 178 W 59 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
