Unisonic Technologies UG4J
EMITTER COMMON
FEATURES
3 2 1 NPN EPITAXIAL SILICON TRANSISTOR * Two DTC114T chips in a SOT-353 package. 5 4 SOT-353 *Pb-free plating product number: UG4JL ORDERING INFORMATION Order Number Normal Lead Free Plating UG4J-AL5-0-R UG4JL-AL5-0-R Package SOT-353 1 B1 Pin Assignment 2 3 4 E1,E2 B2 C2 5 C1 Packing Tape Reel MARKING INFORMATION Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 2 QW-R222-001,A UG4J ABSOLUTE MAXIMUM RATING (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature NPN EPITAXIAL SILICON TRANSISTOR SYMBOL VCBO VCEO VEBO IC PD TJ TSTG RATINGS 50 50 5 100 150(Note1) +150 -40 ~ +150 UNIT V V V mA mW ℃ ℃ Note 1. *120mW per element must not be exceeded. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARA...