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UK1398 - N-CHANNEL MOSFET

General Description

The UTC UK1398 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • RDS(ON) ≤ 20 Ω @ VGS=4.0V, ID=10mA.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription for UK1398 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UK1398. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD UK1398 N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING  DESCRIPTION The UTC UK1398 uses advanced trench technology to provide excellent RDS(ON),...

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C UK1398 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 20 Ω @ VGS=4.