DESCRIPTION
FEATURES
* RDS(ON) =0.4Ω * Low Capacitance * Low Gate Charge * Fast Switching Capability * Avalanche Energy Specified SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UK3568L-TF1-T UK3568G-TF1-T UK3568L-TF2-T UK3568G-TF2-T UK3568L-TF3-T UK3568G-TF3-T Package TO-220F1 TO-220F2 TO-220F Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tube Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-263.E UK3568 Power MOSFET ABSOLUTE MAXIMUM RATINGS
(TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Drain-Gate Voltage (RG=20kΩ) VDSS 500 V VDGR 500 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current (Note 2) DC Pulse(t=1ms) ID 12 48 A Avalanche Current IAR 12 A Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 4) EAS EAR 364 4 mJ Power Dissipation (TC=25°C) TO-220F/TO-220F1 TO-220F2 PD 40 42 W Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °C °C Note:1.