Unisonic Technologies ULB4132
The ULB4132 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.| Part No. | ULB4132 |
|---|---|
| Datasheet | ULB4132 Download |
| Manufacturer |  Unisonic Technologies |
| Description | 30V N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
* RDS(ON) ≤ 5.3 mΩ @ VGS=10V, ID=50A * RDS(ON) ≤ 8.0 mΩ @ VGS=4.5V, ID=40A● SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free ULB4132L-TA3-T ULB4132G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube
● MARKING Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-678.B ULB4132 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous ID Pulsed IDM 78 156 A A Single Pulsed Avalanche Energy (Note 3) EAS 48 mJ Single Pulsed Avalanche Current IAS 31 A Power Dissipation PD 60 W Junction Temperature TJ +150 °C Strong Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
