Unisonic Technologies UMT1N
UMT1N is a dual transistor, including two PNP transistors. It uses UTC’s advanced technology to provide the customers with high DC current gain, etc.DESCRIPTION
The UTC●
FEATURES
* High DC current gain (hFE>120@VCE=-6V, IC=-1mA)● EQUIVALENT CIRCUITS
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free UMT1NL-AL6-R UMT1NG-AL6-R Package SOT-363 Pin Assignment Packing 123456 E1 B1 C2 E2 B2 C1 Tape Reel
● MARKING 6 54 T1N 12 3 L: Lead Free G: Halogen Free Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 3 QW-R218-025.a UMT1N Preliminary DUAL TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS
(TA=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V Collector Current IC -0.15 A (DC) Collector Power Dissipation Pc 0.15 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55~150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.●
ELECTRICAL CHARACTERISTICS
(TA=25°C) PARAMETER Collector-Base Breakdow...