UN1518 Datasheet | Unisonic Technologies

FEATURES NPN SILICON TRANSISTOR - Bipolar power transistor - High current switching - High h FE - Low VCE(SAT) - Pb-free plating product number: UN1518L - ORDERING INFORMATION Order Number Normal Lead Free Plating UN1518-AE3-R UN1518L-AE3-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel .unisonic..tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-088,A - NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise stated) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Current (Pulse) Note 2 ICM 6 A Collector Current (DC) IC 2.5 A Base Current IB 500 m A Total Device Dissipation PD 625 m W ℃ Storage Temperature TSTG -50 ~ +150 Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse test tp=300μs. δ ≤ 2% - ELECTRICAL CHARACTERISTICS MIN 20 20 5 TYP 100 27 8.3 MAX UNIT V V V n A n A n A m V V V PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=100µA Collector-Emitter Breakdown Voltage BVCEO- IC=10m A Emitter-Base Breakdown Voltage BVEBO IE=100µA Collector Cut-Off Current ICBO VCB=16V Emitter Cut-Off Current IEBO VEB=4V Collector Emitter Cut-Off Current ICES VCES=16V IC=0.1A, IB=10m A Collector-Emitter Saturation Voltage VCE(SAT)- IC=1A, IB=10m A IC=2.5A, IB=50m A Base-Emitter Saturation Voltage VBE(SAT)- IC=2.5A, IB=50m A Base-Emitter Turn-On Voltage VBE(ON)- IC=2.5A,VCE=2V IC=10m A, VCE=2V IC=200m A, VCE=2V Static Forward Current Transfer Ratio h FE- IC=2A, VCE=2V IC=6A, VCE=2V Transition Frequency f T IC=50m A, VCE=10V f=100MHz Output Capacitance Cob VCB=10V, f=1MHz Turn-On Time t(ON) VCC=10V, IC=1A IB1=-IB2=10m A Turn-Off Time t(OFF) - Pulse test conditions. tp=300μs. δ ≤ 2% 200 300 200 100 100 10 70 130 0.89 0.79 400 450 360 180 140 23 170 400 100...