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UNA10R160M - 100V N-CHANNEL MOSFET

Datasheet Summary

Description

The UTC UNA10R160M is N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with high switching speed, a extremely low RDS(ON) and low gate charge.

Features

  • RDS(ON) < 16 mΩ @ VGS=10V, ID=25A RDS(ON) < 18 mΩ @ VGS=4.5V, ID=12A.
  • Green Device Available.
  • Low Gate Charge.
  • Surface mount package.
  • SYMBOL.

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Datasheet preview – UNA10R160M

Datasheet Details

Part number UNA10R160M
Manufacturer UTC
File Size 258.01 KB
Description 100V N-CHANNEL MOSFET
Datasheet download datasheet UNA10R160M Datasheet
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UNISONIC TECHNOLOGIES CO., LTD UNA10R160M 60A, 100V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET POWER MOSFET  DESCRIPTION The UTC UNA10R160M is N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with high switching speed, a extremely low RDS(ON) and low gate charge. The UTC UNA10R160M is suitable for high frequency Point -of-Load Synchronous, Networking DC-DC System, CCFL Back-light Inverter, etc.  FEATURES * RDS(ON) < 16 mΩ @ VGS=10V, ID=25A RDS(ON) < 18 mΩ @ VGS=4.
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