Unisonic Technologies UND02R100L
UND02R100L is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology. The UTC UND02R100L is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.| Part No. | UND02R100L |
|---|---|
| Datasheet | UND02R100L Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 8.2 mΩ @ VGS=4.5V, ID=8.0A RDS(ON) ≤ 9.5 mΩ @ VGS=2.5V, ID=7.0A RDS(ON) ≤ 12 mΩ @ VGS=1.8V, ID=4.0A * High Cell Density Trench Technology * High Power and Current Handling Capability● SYMBOL
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package Pin Assignment 1234567 8 Packing UND02R100LK-K08-3030-R UND02R100LG-K08-3030-R DFN-8(3×3) S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source
● MARKING Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-247.a UND02R100L Preliminary Power MOSFET
● ABSOLUTE MAXIMUM RATING (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 20 ±8 V V Drain Current Continuous Pulsed (Note 2) ID IDM 25 60 A A Power Dissipation Junction Temperature PD 31 W TJ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
