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UND02R100L Datasheet N-channel MOSFET

Manufacturer: Unisonic Technologies

Overview: UNISONIC TECHNOLOGIES CO., LTD UND02R100L Preliminary 25A, 20V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET POWER MOSFET.

General Description

The UTC UND02R100L is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology.

The UTC UND02R100L is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.

Key Features

  • RDS(ON) ≤ 8.2 mΩ @ VGS=4.5V, ID=8.0A RDS(ON) ≤ 9.5 mΩ @ VGS=2.5V, ID=7.0A RDS(ON) ≤ 12 mΩ @ VGS=1.8V, ID=4.0A.
  • High Cell Density Trench Technology.
  • High Power and Current Handling Capability.
  • SYMBOL.

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