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UND02R100L - N-CHANNEL MOSFET

Datasheet Summary

Description

The UTC UND02R100L is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology.

Features

  • RDS(ON) ≤ 8.2 mΩ @ VGS=4.5V, ID=8.0A RDS(ON) ≤ 9.5 mΩ @ VGS=2.5V, ID=7.0A RDS(ON) ≤ 12 mΩ @ VGS=1.8V, ID=4.0A.
  • High Cell Density Trench Technology.
  • High Power and Current Handling Capability.
  • SYMBOL.

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Datasheet Details

Part number UND02R100L
Manufacturer UTC
File Size 206.40 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet UND02R100L Datasheet
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    UNISONIC TECHNOLOGIES CO., LTD UND02R100L Preliminary 25A, 20V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET POWER MOSFET  DESCRIPTION The UTC UND02R100L is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology. The UTC UND02R100L is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.  FEATURES * RDS(ON) ≤ 8.2 mΩ @ VGS=4.5V, ID=8.0A RDS(ON) ≤ 9.5 mΩ @ VGS=2.5V, ID=7.0A RDS(ON) ≤ 12 mΩ @ VGS=1.8V, ID=4.
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