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UP2003 - P-Channel Power MOSFET

Datasheet Summary

Description

The UP2003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

  • S.
  • RDS(ON).

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Datasheet preview – UP2003

Datasheet Details

Part number UP2003
Manufacturer UTC
File Size 243.70 KB
Description P-Channel Power MOSFET
Datasheet download datasheet UP2003 Datasheet
Additional preview pages of the UP2003 datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UP2003 9A, 25V P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Power MOSFET  DESCRIPTION The UP2003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON)<35 mΩ @ VGS =-4.5 V, ID =-7 A * RDS(ON)<20 mΩ @ VGS =-10 V, ID =-9 A  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UP2003L-TN3-R UP2003G-TN3-R Package TO-252 Pin Assignment 1 2 3 G D S Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-202.
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