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UP2003 - P-Channel Power MOSFET

General Description

The UP2003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • RDS(ON).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UP2003 9A, 25V P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Power MOSFET  DESCRIPTION The UP2003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON)<35 mΩ @ VGS =-4.5 V, ID =-7 A * RDS(ON)<20 mΩ @ VGS =-10 V, ID =-9 A  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UP2003L-TN3-R UP2003G-TN3-R Package TO-252 Pin Assignment 1 2 3 G D S Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-202.