Unisonic Technologies UP2003
The UP2003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.| Part No. | UP2003 |
|---|---|
| Datasheet | UP2003 Download |
| Manufacturer |  Unisonic Technologies |
| Description | P-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
* RDS(ON)<35 mΩ @ VGS =-4.5 V, ID =-7 A * RDS(ON)<20 mΩ @ VGS =-10 V, ID =-9 A● SYMBOL
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free UP2003L-TN3-R UP2003G-TN3-R Package TO-252 Pin Assignment 1 2 3 G D S Packing Tape Reel
● MARKING Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-202.C UP2003 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain Source Voltage Gate Source voltage VDSS -25 V VGSS ±20 V Continuous Drain Current Pulsed Drain Current (Note 1) ID IDM -9 -36 A Power Dissipation PD 2.5 W Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.● THERMAL DATA PARAMETER Junction-to-Ambient Junction-to-Case SYMBOL θJA θJC MIN TYP
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ELECTRICAL CHARACTERISTICS
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