Unisonic Technologies UP2518
LOW VCE(SAT) PNP SILICON POWER TRANSISTORS
| Part No. | UP2518 |
|---|---|
| Datasheet | UP2518 Download |
| Manufacturer |  Unisonic Technologies |
| Description | LOW VCE(SAT) PNP SILICON POWER TRANSISTORS |
| Buy | Stock & Price |
FEATURES
* Extremely low collector-emitter saturation voltage VCE(SAT) and corresponding extremely low equivalent on-resistance RCE(SAT) (97mΩ at 1.5A) * High collector current capability(1.5A) * High peak pulse current up to 6A * High collector current gain● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UP2518L-AE3-R UP2518G-AE3-R SOT-23 Note: Pin Assignment: B: Base E: Emitter C: Collector Pin Assignment 123 BEC Packing Tape Reel
● MARKING Y18 L: Lead Free G: Halogen Free Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-083.C UP2518 PNP TRANSISTOR
● ABSOLUTE MAXIMUM RATING (TA= 25°C, unless otherwise stated) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -20 V Collector-Emitter Voltage Emitter-Base Voltage VCEO VEBO -20 -5 V V Peak Pulse Current (Note 2) Continuous Collector Current IPEAK IC -6 -1.5 A A Base Current Power Dissipation (Note 3) TA=25°C IB PD -500 625 mA mW Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.