Unisonic Technologies UP9T15G
The UP9T15G uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.| Part No. | UP9T15G |
|---|---|
| Datasheet | UP9T15G Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
* VDS(V)=20V * ID=12 .5A (VGS=4.5V) * RDS(ON) < 50mΩ @ VGS =4.5 V, ID =6 A * RDS(ON) < 80mΩ @ VGS =2.5 V, ID =5.2 A● SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free UP9T15GL-TN3-R UP9T15GP-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 123 GD S Packing Tape Reel
● MARKING Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-208.B UP9T15G Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TJ =25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , @ VGS= 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor TC=25°C TC=25°C VDSS VGSS ID IDM PD 20 V ±12 V 12.5 A 60 A 12.5 W 0.1 W/°C Junction Temperature TJ +150 °C Strong Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
