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UPG11N120 - 1200V NPT PLANAR IGBT

General Description

The UTC UPG11N120 is a 1200V NPT Planar Insulated Gate Bipolar Transistor.

it uses UTC’s advanced technology to offers superior conduction and switching performance, high avalanche ruggedness and easy parallel operation.

Key Features

  • High speed switching.
  • High input impedance.
  • Low saturation voltage: VCE(SAT) =2.4V @ IC=11A.
  • SYMBOL.

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UNISONIC TECHNOLOGIES CO., LTD UPG11N120 Insulated Gate Bipolar Transistor 1200V NPT PLANAR IGBT  DESCRIPTION The UTC UPG11N120 is a 1200V NPT Planar Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to offers superior conduction and switching performance, high avalanche ruggedness and easy parallel operation.  FEATURES * High speed switching * High input impedance * Low saturation voltage: VCE(SAT) =2.4V @ IC=11A  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UPG11N120L-T47-T UPG11N120G-T47-T TO-247 Note: Pin Assignment: G: Gate C: Collector E: Emitter Pin Assignment 123 GCE Packing Tube  MARKING www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 3 QW-R234-010.