Datasheet Details
| Part number | US650 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 153.76 KB |
| Description | SCRS |
| Datasheet | US650-UTC.pdf |
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Overview: US650 SCRS UNISONIC TECHNOLOGIES CO., LTD Preliminary .
| Part number | US650 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 153.76 KB |
| Description | SCRS |
| Datasheet | US650-UTC.pdf |
|
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|
Passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications.
These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
SYMBOL SCR ORDERING INFORMATION Ordering Number Lead Free Halogen Free US650L-TA3-T US650G-TA3-T Note: Pin Assignment: K: Cathode A: Anode G: Gate Package TO-220 Pin Assignment 123 KAG Packing Tube US650G-TA3-T (1)Packing Type (2)Package Type (3)Green Package (1) T: Tube (2) TA3: TO-220 (3) G: Halogen Free and Lead Free, L: Lead Free MARKING www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 3 QW-R301-026.a US650 Preliminary SCR ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Repetitive Peak Off-State Voltages (Note 2) VDRM,VRRM 600 V Peak Reverse Gate Voltage Peak Gate Current (tP=20μs, TJ=125C) VRGM IGM 5 4 V A Average On-State Current (180 Conduction Angles) TC=95C RMS On-State Current (180 Conduction Angles) TC=95C IT(AV) IT(RMS) 25 40 A A Non-Repetitive Peak On-State Current (Half Sine Wave, TJ=25C Prior to Surge) I2t For Fusing (tP=10ms) TJ=25C tP=10ms tP=8.3ms ITSM I2t 460 480 1060 A A A2S Repetitive Rate of Rise of On-State Current After Triggering (F=60Hz, TJ=125C) dIT/dt 50 A/s Average Gate Power Dissipation (TJ=125C) PG(AV) 1 W Junction Temperature Storage Temperature TJ TSTG -40 ~ +125 -40 ~ +150 C C Note: 1.
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