USC120R040B Overview
SiC The material can achieve high voltage with most carrier devices (MOSFET) with fast device structure characteristics, so it can realize the three characteristics of "high voltage", "low on resistance" and "high frequency" at the same time. It is widely used in electric vehicle charger, industrial equipment power supply, efficient power regulator inverter and rectification part and other uses.
USC120R040B Key Features
- RDS(ON) ≤ 53 mΩ @ VGS=18V, ID=30A
- High Blocking Voltage
- High Frequency Operation
- Low on-resistance
- Fast intrinsic diode with low reverse recovery
- 100% avalanche tested
- SYMBOL
- ORDERING INFORMATION
- MARKING