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USC120R040B - 57A 1200V N-CHANNEL SILICON CARBIDE PLANAR ENHANCEMENT POWER MOSFET

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Part number USC120R040B
Manufacturer UTC
File Size 1.10 MB
Description 57A 1200V N-CHANNEL SILICON CARBIDE PLANAR ENHANCEMENT POWER MOSFET
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Description

SiC The material can achieve high voltage with most carrier devices (MOSFET) with fast device structure characteristics, so it can realize the three characteristics of "high voltage", "low on resistance" and "high frequency" at the same time.

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