USC120R040B
DESCRIPTION
Si C The material can achieve high voltage with most carrier devices (MOSFET) with fast device structure characteristics, so it can realize the three characteristics of "high voltage", "low on resistance" and "high frequency" at the same time.
It is widely used in electric vehicle charger, industrial equipment power supply, efficient power regulator inverter and rectification part and other uses.
- FEATURES
- RDS(ON) ≤ 53 mΩ @ VGS=18V, ID=30A
- High Blocking Voltage
- High Frequency Operation
- Low on-resistance
- Fast intrinsic diode with low reverse recovery
- 100% avalanche tested
- SYMBOL
Power MOSFET
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QW-R209-510.B
- ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
USC120R040BL-T474-T USC120R040BG-T474-T
Note: Pin Assignment: D: Drain S: Source G: Gate
Package TO-247-4
Power MOSFET
Pin Assignment 1234 DSSG
Packing Tube
- MARKING
UNISONIC TECHNOLOGIES CO.,...
