Description
SiC The material can achieve high voltage with most carrier devices (MOSFET) with fast device structure characteristics, so it can realize the three characteristics of "high voltage", "low on resistance" and "high frequency" at the same time.
Features
- S.
- RDS(ON) ≤ 53 mΩ @ VGS=18V, ID=30A.
- High Blocking Voltage.
- High Frequency Operation.
- Low on-resistance.
- Fast intrinsic diode with low reverse recovery.
- 100% avalanche tested.
- SYMBOL
Power MOSFET
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QW-R209-510.B
USC120R040B.
USC120R040B Datasheet
