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UT02N06VZ - N-CHANNEL MOSFET

General Description

The UT02N06VZ employs advanced MOSFET technology and

Key Features

  • S.
  • RDS(ON) ≤ 4.0 Ω @ VGS=4.5V, ID=0.22A RDS(ON) ≤ 5.0 Ω @ VGS=2.5V, ID=0.20A.
  • Low Capacitance.
  • Low Gate Charge.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • SYMBOL 3.Drain Power MOSFET 1.Gate 2.Source www. unisonic. com. tw Copyright © 2023 Unisonic Technologies Co. , Ltd 1 of 7 QW-R209-435.a UT02N06VZ Preliminary Power MOSFET.

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Other Datasheets by Unisonic Technologies

Part Number Description
UT02P06 P-CHANNEL POWER MOSFET
UT03NN03Z 30V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
UT03P06 P-CHANNEL POWER MOSFET
UT06P03 P-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT02N06VZ Preliminary N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE  DESCRIPTION The UT02N06VZ employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.  FEATURES * RDS(ON) ≤ 4.0 Ω @ VGS=4.5V, ID=0.22A RDS(ON) ≤ 5.0 Ω @ VGS=2.5V, ID=0.20A * Low Capacitance * Low Gate Charge * Fast Switching Capability * Avalanche Energy Specified  SYMBOL 3.Drain Power MOSFET 1.Gate 2.Source www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 7 QW-R209-435.