Unisonic Technologies UT1333
The UT1333 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.| Part No. | UT1333 |
|---|---|
| Datasheet | UT1333 Download |
| Manufacturer |  Unisonic Technologies |
| Description | P-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
* RDS(ON) ≤ 600mΩ @ VGS=-10V, ID=-550mA RDS(ON) ≤ 800mΩ @ VGS=-4.5V, ID=-500mA RDS(ON) ≤ 1000mΩ @ VGS=-2.5V, ID=-300mA * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified● SYMBOL 3.Drain Power MOSFET 3 2 1 SOT-323 1.Gate 2.Source
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT1333L-AL3-R UT1333G-AL3-R Note: Pin Assignment: G: Gate S: Source D: Drain Package SOT-323 Pin Assignment 1 2 3 G S D Packing Tape Reel UT1333G-AL3-R (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AL3: SOT-323 (3)Green Package (3) G: Halogen Free and Lead Free, L: Lead Free
● MARKING 1333 Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 6 QW-R210-061.C UT1333 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current Continuous ID -550 mA Pulsed Drain Current Pulsed (Note 2) IDM -2200 mA Power Dissipation (TA=25°С) PD 0.35 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.
