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UT136N03 - 30V N-Channel Power MOSFET

General Description

The UT136N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • RDS(ON) ≤ 3.0 mΩ @ VGS=10V, ID=40A RDS(ON) ≤ 4.0 mΩ @ VGS=4.5V, ID=40A.
  • SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2024 Unisonic Technologies Co. , Ltd 1 of 5 QW-R502-459.c UT136N03 Preliminary Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT136N03 Preliminary 136A, 30V N-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UT136N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 3.0 mΩ @ VGS=10V, ID=40A RDS(ON) ≤ 4.0 mΩ @ VGS=4.5V, ID=40A  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-459.