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UT136N03 - 30V N-Channel Power MOSFET

Datasheet Summary

Description

The UT136N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

  • S.
  • RDS(ON) ≤ 3.0 mΩ @ VGS=10V, ID=40A RDS(ON) ≤ 4.0 mΩ @ VGS=4.5V, ID=40A.
  • SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2024 Unisonic Technologies Co. , Ltd 1 of 5 QW-R502-459.c UT136N03 Preliminary Power MOSFET.

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Datasheet Details

Part number UT136N03
Manufacturer UTC
File Size 241.58 KB
Description 30V N-Channel Power MOSFET
Datasheet download datasheet UT136N03 Datasheet
Additional preview pages of the UT136N03 datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UT136N03 Preliminary 136A, 30V N-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UT136N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 3.0 mΩ @ VGS=10V, ID=40A RDS(ON) ≤ 4.0 mΩ @ VGS=4.5V, ID=40A  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-459.
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