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UT20N03 - N-CHANNEL MOSFET

General Description

, at any time and without notice.

This document supersedes and replaces all information supplied prior to the publication hereof.

Key Features

  • S.
  • RDS(ON) ≤ 20 mΩ @ VGS=10V, ID =15A RDS(ON) ≤ 31 mΩ @ VGS=4.5V, ID =15A.
  • Low capacitance.
  • Optimized gate charge.
  • Fast switching capability.
  • Avalanche energy specified Power MOSFET 1 TO-252 SOP-8 1 DS DFN2020-6B 1 1.
  • SYMBOL PDFN3×3 PDFN5×6.

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Full PDF Text Transcription (Reference)

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UNISONIC TECHNOLOGIES CO., LTD UT20N03 N-CHANNEL ENHANCEMENT MODE  FEATURES * RDS(ON) ≤ 20 mΩ @ VGS=10V, ID =15A RDS(ON) ≤ 31 mΩ @ VGS=4.