Unisonic Technologies UT2301Z
UT2301Z is a P-channel enhancement mode power MOSFET with fast switching speed, low on-resistance and favorable stabilization. It can be used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.DESCRIPTION
The UTC●
FEATURES
* Very High Density Cell Design for Low On-Resistance * Very Good Thermal and Electrical Capabilities● SYMBOL 3.Drain Power MOSFET 1.Gate 2.Source
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UT2301ZL-AE3-R UT2301ZG-AE3-R SOT-23 Note: Pin Assignment: G: Gate S: Source D: Drain Pin Assignment 123 GSD Packing Tape Reel
● MARKING Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-281.J UT2301Z Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNITS Drain-Source Voltage Gate-Source Voltage VDS -20 V VGS ±8 V Continuous Drain Current Pulsed Drain Current (Note 2, 3) ID -2.8 A IDM -10 A Total Power Dissipation (Note 4) Junction Temperature PD 1.25 W TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.