Unisonic Technologies UT2311-F
P-CHANNEL MOSFET
| Part No. | UT2311-F |
|---|---|
| Datasheet | UT2311-F Download |
| Manufacturer |  Unisonic Technologies |
| Description | P-CHANNEL MOSFET |
| Buy | Stock & Price |
FEATURES
* Extremely low on-resistance due to high density cell * Perfect thermal performance and electrical capability with advanced technology of trench process● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT2311L-AE2-R UT2311G-AE2-R Note: Pin Assignment: G: Gate S: Source D: Drain Package SOT-23-3 Pin Assignment 123 GSD Packing Tape Reel
● MARKING Year: K: 2016 (1H) L: 2016 (2H) M: 2017 (1H) N: 2017 (2H) Week: 01~26 (A~Z) S Lot Code Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 5 QW-R210-047.B UT2311-F Power MOSFET
●
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current ID -4.7 A Pulsed Drain Current IDM -18.8 A Power Dissipation (TC=25°C) (Note 2) PD 1.25 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
