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UT2N06 - 60V SHIELDED GATE N-CHANNEL POWER MOSFET

General Description

The UTC UT2N06 is N-Channel MOSFET produced using advanced Power process that incorporates Shielded Gate technology.

This process has been optimized for RDS(ON), switching performance and ruggedness.

Key Features

  • S.
  • RDS(ON) ≤ 235 mΩ @ VGS=10V, ID=2.2A RDS(ON) ≤ 280 mΩ @ VGS=4.5V, ID=1.3A.
  • Simple drive requirement.
  • Small package outline.
  • Fast Switching Speed 1 1 SOT-89 TO-92.
  • SYMBOL 3.Drain 1.Gate 2.Source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT2N06 2.2A, 60V SHIELDED GATE N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2N06 is N-Channel MOSFET produced using advanced Power process that incorporates Shielded Gate technology. This process has been optimized for RDS(ON), switching performance and ruggedness. POWER MOSFET 3 2 1 SOT-23-3 (JEDEC TO-236) 3 2 1 SOT-23 (JEDEC SC-59)  FEATURES * RDS(ON) ≤ 235 mΩ @ VGS=10V, ID=2.2A RDS(ON) ≤ 280 mΩ @ VGS=4.5V, ID=1.3A * Simple drive requirement * Small package outline * Fast Switching Speed 1 1 SOT-89 TO-92  SYMBOL 3.Drain 1.Gate 2.