UT2N06 Description
The UTC UT2N06 is N-Channel MOSFET produced using advanced Power process that incorporates Shielded Gate technology. This process has been optimized for RDS(ON), switching performance and ruggedness.
UT2N06 Key Features
- RDS(ON) ≤ 235 mΩ @ VGS=10V, ID=2.2A RDS(ON) ≤ 280 mΩ @ VGS=4.5V, ID=1.3A
- Simple drive requirement
- Small package outline
- Fast Switching Speed
- SYMBOL
- ORDERING INFORMATION