Unisonic Technologies UT3414
The UT3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.| Part No. | UT3414 |
|---|---|
| Datasheet | UT3414 Download |
| Manufacturer |  Unisonic Technologies |
| Description | Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
* RDS(ON) ≤ 50mΩ @ VGS=4.5V, ID=4.2A * RDS(ON) ≤ 63mΩ @ VGS=2.5V, ID=3.7A * RDS(ON) ≤ 87mΩ @ VGS=1.8V, ID=3.2A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT3414L-AE2-R UT3414G-AE2-R UT3414L-AE3-R UT3414G-AE3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-23-3 SOT-23 Pin Assignment 1 2 3 G S D G S D Packing Tape Reel Tape Reel
● MARKING Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-248.I UT3414 Power MOSFET
●
ABSOLUTE MAXIMUM RATINGS
(TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current ID 4.2 A Pulsed Drain Current IDM 15 A Power Dissipation SOT-23-3 SOT-23 PD 0.5 W 0.6 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
