UT3N01Z Datasheet PDF - UTC N-CHANNEL MOSFET Specs

UT3N01Z - N-CHANNEL MOSFET

Datasheet Summary

Description

The UT3N01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device’s general purpose is for switching device applications.

Features

RDS(ON) ≤ 2.0Ω @ VGS=4V, ID=80mA RDS(ON) ≤ 3.0Ω @ VGS=2.5V, ID=40mA RDS(ON) ≤ 12.8Ω @ VGS=1.5V, ID=10mA.
Ultra low gate charge ( typical 5 nC ).
Low reverse transfer capacitance ( CRSS = typical 7.5 pF ).
Fast switching capability.
Enhanced ESD capability.
SYMBOL Power MOSFET.

Datasheet Details

Part number	UT3N01Z
Manufacturer	UTC
File Size	210.48 KB
Description	N-CHANNEL MOSFET
Datasheet	UT3N01Z Datasheet
Additional preview pages of the UT3N01Z datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UT3N01Z N-CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS  DESCRIPTION The UT3N01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device’s general purpose is for switching device applications.  FEATURES * RDS(ON) ≤ 2.0Ω @ VGS=4V, ID=80mA RDS(ON) ≤ 3.0Ω @ VGS=2.5V, ID=40mA RDS(ON) ≤ 12.8Ω @ VGS=1.5V, ID=10mA * Ultra low gate charge ( typical 5 nC ) * Low reverse transfer capacitance ( CRSS = typical 7.

Published: Feb 20, 2016 |