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UT3NN10 - DUAL N-CHANNEL MOSFET

General Description

The UTC UT3NN10 is a dual N-Channel enhancement mode power MOSFET, it provides designer with fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • S.
  • RDS(ON) ≤ 0.15 Ω @ VGS=10V, ID=3.0A RDS(ON) ≤ 0.17 Ω @ VGS=4.5V, ID=1.0A.
  • Fast Switching Speed.
  • Simple Drive Requirement.
  • SYMBOL Power MOSFET 1 PDFN5×6.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT3NN10 3.0A, 100V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UT3NN10 is a dual N-Channel enhancement mode power MOSFET, it provides designer with fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness.  FEATURES * RDS(ON) ≤ 0.15 Ω @ VGS=10V, ID=3.0A RDS(ON) ≤ 0.17 Ω @ VGS=4.5V, ID=1.0A * Fast Switching Speed * Simple Drive Requirement  SYMBOL Power MOSFET 1 PDFN5×6  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT3NN10L-P5060-R UT3NN10G-P5060-R Note: Pin Assignment: S: Source G: Gate Package PDFN5×6 D: Drain Pin Assignment 1 2 3 4 5, 6 7, 8 S1 G1 S2 G2 D2 D1 Packing Tape Reel www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 8 QW-R209-305.