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UT4101 Datasheet P-channel Power MOSFET

Manufacturer: Unisonic Technologies

Overview: UNISONIC TECHNOLOGIES CO., LTD UT4101 P-CHANNEL ENHANCEMENT MODE .

General Description

The UTC UT4101 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

 SYMBOL 3.Drain Power MOSFET 1.Gate 2.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT4101L-AE2-R UT4101G-AE2-R UT4101L-AE3-R UT4101G-AE3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-23-3 SOT-23 Pin Assignment 1 2 3 G S D G S D Packing Tape Reel Tape Reel  MARKING 41A L: Lead Free G: Halogen Free www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-164.E UT4101 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNITS Drain-Source Voltage Gate-Source Voltage VDS -20 V VGS ±8.0 V Continuous Drain Current (Note 3) ID Pulsed Drain Current (Note 1, 2) IDM -2.4 A -7.5 A Power Dissipation SOT-23-3 SOT-23 PD 0.65 W 0.67 W Junction Temperature Storage Temperature TJ TSTG +150 °C -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

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