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UT4430 - N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

General Description

The UT4430 uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for applications, such as high-side DC/DC conversion, notebook and sever.

Key Features

  • ES.
  • VDS(V)=30V.
  • ID=18A (VGS = 10V).
  • RDS(ON).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT4430 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION Power MOSFET The UT4430 uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for applications, such as high-side DC/DC conversion, notebook and sever. „ FEATURES * VDS(V)=30V * ID=18A (VGS = 10V) * RDS(ON)<5.5mΩ@VGS=10V * RDS(ON)<7.5mΩ@VGS=4.5V * Halogen-Free „ SYMBOL Drain Gate Source „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT4430L-S08-R UT4430G-S08-R Package SOP-8 Packing Tape Reel www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-333.A Free Datasheet http://www.datasheet4u.