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UT4957 - P-Channel Power MOSFET

Datasheet Summary

Description

The UT4957 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

  • S.
  • RDS(ON) ≤ 24mΩ @ VGS=-10V, ID=-7A.
  • RDS(ON) ≤ 36mΩ @ VGS=-4.5V, ID=-5A.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL Power MOSFET.

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Datasheet Details

Part number UT4957
Manufacturer UTC
File Size 257.02 KB
Description P-Channel Power MOSFET
Datasheet download datasheet UT4957 Datasheet
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UNISONIC TECHNOLOGIES CO., LTD UT4957 P-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UT4957 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 24mΩ @ VGS=-10V, ID=-7A * RDS(ON) ≤ 36mΩ @ VGS=-4.5V, ID=-5A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT4957L-S08-R UT4957G-S08-R Note: Pin Assignment: G: Gate D: Drain Package SOP-8 S: Source Pin Assignment 12345678 S1 G1 S2 G2 D2 D2 D1 D1 Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co.
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