Datasheet Summary
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
DUAL ENHANCEMENT MODE (N-CHANNEL / P-CHANNEL)
- DESCRIPTION
The UTC UT4NP03 incorporates a N-channel MOSFET and a P-channel MOSFET，it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed, low gate charge and cost effectiveness.
The UTC UT4NP03 is universally applied in low voltage applications.
- Features
- N-CHANNEL RDS(on) ≤ 45 mΩ @ VGS=10V, ID=2.0A RDS(on) ≤ 62 mΩ @ VGS=4.5V, ID=2.0A
- P-CHANNEL RDS(on) ≤ 96 mΩ @ VGS=-10V, ID=-2.0A RDS(on) ≤ 130 mΩ @ VGS=-4.5V, ID=-2.0A
- High switching speed
- SYMBOL
(1) Drain
(2) Drain
Power MOSFET
SOP-8
(1) Gate
(2) Gate
Source
(1)...