Unisonic Technologies UT5003
The UT5003 can provide excellent RDS (ON) and low gate charge by using UTC’s advanced trench technology. This device is suitable for use as a load switch or in PWM applications.| Part No. | UT5003 |
|---|---|
| Datasheet | UT5003 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL/P-CHANNEL Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
* N-Channel: 30V, 7A RDS(ON) < 27.5mΩ @ VGS=10V, ID=7A RDS(ON) < 40mΩ @ VGS=4.5V, ID=6A * P-Channel: -30V, -5A RDS(ON) < 45mΩ @ VGS=-10V, ID=-5A RDS(ON) < 80mΩ @ VGS=-4.5V, ID=-4A * Super high dense cell design * Reliable and rugged● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number UT5003G-S08-R Note: Pin Assignment: G: Gate D: Drain Package SOP-8 S: Source Pin Assignment 12345678 S1 G1 S2 G2 D2 D2 D1 D1 Packing Tape Reel
● MARKING Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-167.B UT5003 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) N-Channel: PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note3) Pulsed Drain Current (Note3) Power Dissipation Junction Temperature Storage Temperature TC=25°C TC=25°C SYMBOL VDSS VGSS ID IDM PD TJ TSTG RATINGS 30 ±20 7 20 2 +150 -55 ~ +150 UNIT V V A A W °C °C P-Channel: PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source...
