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UT6401 Datasheet P-channel MOSFET

Manufacturer: Unisonic Technologies

Overview: UNISONIC TECHNOLOGIES CO., LTD UT6401 5.0A, 30V P-CHANNEL ENHANCEMENT MODE Power MOSFET.

General Description

The UTC UT6401 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities, operation with low gate charge.

This device is suitable for use as a load switch or in PWM applications.

 SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT6401L-AA3-R UT6401G-AA3-R UT6401L-AE3-R UT6401G-AE3-R UT6401L-AG6-R UT6401G-AG6-R UT6401L-S08-R UT6401G-S08-R Note: Pin Assignment: G: Gate D: Drain Package SOT-223 SOT-23 SOT-26 SOP-8 S: Source Pin Assignment 12345678 Packing G D S - - - - - Tape Reel G S D - - - - - Tape Reel D D G S D D - - Tape Reel S S S G D D D D Tape Reel .unisonic..tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-151.G UT6401  MARKING SOT-223 SOT-26 Power MOSFET SOT-23 SOP-8 UNISONIC TECHNOLOGIES CO., LTD .unisonic..tw 2 of 6 QW-R502-151.G UT6401 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS -30 ±12 V Continuous Drain Current (Note 3) Pulsed Drain Current (Note 2) ID IDM -5 -20 A SOT-223 1.5 W Power Dissipation SOT-23/SOT-26 PD 1 W SOP-8 1.2 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

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