DESCRIPTION
FEATURES
* RDS(ON) ≤ 63 mΩ @ VGS=10V, ID=5.0A * RDS(ON) ≤ 86 mΩ @ VGS=4.5V, ID=2.5A * Ultra low gate charge ( typical 16 nC ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness SYMBOL (7) (8) 1.Drain (5) (6) 2.Drain Power MOSFET (2) 1.Gate (4) 2.Gate (1) 1.Source (3) 2.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UT9971L-S08-R UT9971G-S08-R SOP-8 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12345678 Packing S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 4 QW-R209-047.A UT9971 MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 8 QW-R209-047.A UT9971 Power MOSFET ABSOLUTE MAXIMUM RATINGS
(TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage Continuous Drain Current (VGS=10V) VGSS ID ±20 5 V A Pulsed Drain Current (Note 2,3) Power Dissipation IDM 30 A PD 1.6 W Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °C °C Notes: 1.