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UTC606P-H - P-CHANNEL 1.8V TRENCH MOSFET

General Description

The UTC UTC606P-H is a P-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance and high switching speed.

The UTC UTC606P-H is suitable for battery management, load switch and battery protection.

Key Features

  • RDS(ON) < 26mΩ @ VGS= -4.5V, ID= -6A RDS(ON) < 35mΩ @ VGS= -2.5V, ID= -5A RDS(ON) < 53mΩ @ VGS= -1.8V, ID= -4A.
  • High switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • SYMBOL 65 4 1 23 SOT-26.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UTC606P-H Preliminary -6A, -12V, P-CHANNEL 1.8V TRENCH MOSFET Power MOSFET  DESCRIPTION The UTC UTC606P-H is a P-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance and high switching speed. The UTC UTC606P-H is suitable for battery management, load switch and battery protection.  FEATURES * RDS(ON) < 26mΩ @ VGS= -4.5V, ID= -6A RDS(ON) < 35mΩ @ VGS= -2.5V, ID= -5A RDS(ON) < 53mΩ @ VGS= -1.