UTG4N65-S
DESCRIPTION
The UTC UTG4N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc.
The UTC UTG4N65-S is suitable for the resonant or soft switching applications.
- FEATURES
- High switching speed
- High avalanche ruggedness
- Low saturation voltage: VCE(SAT).Typ.=1.44V @ IC=4.0A, VGE=15V
(TC =25°C)
- SYMBOL
- ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTG4N65L-TN3-R
UTG4N65G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package TO-252
Pin Assignment
Packing Tape Reel
- MARKING
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QW-R203-107.a
Preliminary
Insulated Gate Bipolar Transistor
- ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCES
Gate-Emitter Voltage Transient Gate-emitter voltage (tp < 5 ms)
VGES
±20...
