• Part: UTG50N120-S
  • Description: 1200V TRENCH GATE FIELD-STOP IGBT
  • Manufacturer: Unisonic Technologies
  • Size: 229.26 KB
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Datasheet Summary

UNISONIC TECHNOLOGIES CO., LTD Preliminary Insulated Gate Bipolar Transistor 1200V TRENCH GATE FIELD-STOP IGBT - DESCRIPTION The UTC UTG50N120-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG50N120-S is suitable for the resonant or soft switching applications. - Features - High switching speed - High avalanche ruggedness - Low saturation voltage: VCE(SAT).Typ.=1.45V @ IC=50A, VGE=15V (TC =25°C) - SYMBOL - ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTG50N120L-T47-T UTG50N120G-T47-T TO-247...