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UTG7N65-S Datasheet

Manufacturer: Unisonic Technologies
UTG7N65-S datasheet preview

UTG7N65-S Details

Part number UTG7N65-S
Datasheet UTG7N65-S-UTC.pdf
File Size 198.99 KB
Manufacturer Unisonic Technologies
Description 650V TRENCH GATE FIELD-STOP IGBT
UTG7N65-S page 2 UTG7N65-S page 3

UTG7N65-S Overview

The UTC UTG7N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG7N65-S is suitable for the resonant or soft switching applications.

UTG7N65-S Key Features

  • High switching speed
  • High avalanche ruggedness
  • Low saturation voltage: VCE(SAT).Typ.=1.5V @ IC=7.0A, VGE=15V
  • SYMBOL
  • ORDERING INFORMATION
  • MARKING

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