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UTL1426 - N-CHANNEL MOSFET

Datasheet Summary

Description

The UTL1426 uses UTC’s advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

  • RDS(ON)< 10.5 mΩ @VGS=10V.
  • RDS(ON)< 12.5 mΩ @VGS=4.5V.
  • Low capacitance.
  • Low gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

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Datasheet Details

Part number UTL1426
Manufacturer UTC
File Size 204.46 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet UTL1426 Datasheet
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UNISONIC TECHNOLOGIES CO., LTD UTL1426 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTL1426 uses UTC’s advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON)< 10.5 mΩ @VGS=10V * RDS(ON)< 12.5 mΩ @VGS=4.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified  SYMBOL 2.Drain Power MOSFET 1.Gate 3.
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