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UTM3023 - N-CHANNEL MOSFET

Key Features

  • S.
  • RDS(ON) < 20mΩ @ VGS =10 V, IDS =20 A RDS(ON) < 28mΩ @ VGS =5 V, IDS =10 A.
  • Low capacitance.
  • Optimized gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL 2.Drain 1.Gate 3.Source.

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Full PDF Text Transcription for UTM3023 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UTM3023. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD UTM3023 N-CHANNEL ENHANCEMENT MODE Power MOSFET  FEATURES * RDS(ON) < 20mΩ @ VGS =10 V, IDS =20 A RDS(ON) < 28mΩ @ VGS =5 V, IDS =10 A * L...

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< 20mΩ @ VGS =10 V, IDS =20 A RDS(ON) < 28mΩ @ VGS =5 V, IDS =10 A * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified  SYMBOL 2.Drain 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTM3023L-TN3-T UTM3023G-TN3-T UTM3023L-TN3-R UTM3023G-TN3-R Package TO-252 TO-252 Pin Assignment 123 GDS GDS Packing Tube Tape Reel www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-178.

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