Datasheet Summary
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR
- DESCRIPTION
The UTP2012Z is an PNP low VCE(SAT) Breakthrough In Small Signal (BISS) transistor in a medium power.
NPN plement: UTN2010Z.
- Features
- Very low collector-emitter saturation voltage VCE(SAT)
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High energy efficiency due to less heat generation
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
- ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTP2012ZL-AB3-R
UTP2012ZG-AB3-R
Note: Pin...