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UTP2012Z - 60V PNP TRANSISTOR

Datasheet Summary

Description

The UTP2012Z is an PNP low VCE(SAT) Breakthrough In Small Signal (BISS) transistor in a medium power.

NPN complement: UTN2010Z.

Features

  • S.
  • Very low collector-emitter saturation voltage VCE(SAT).
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • High energy efficiency due to less heat generation.
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors.

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Datasheet preview – UTP2012Z

Datasheet Details

Part number UTP2012Z
Manufacturer UTC
File Size 219.85 KB
Description 60V PNP TRANSISTOR
Datasheet download datasheet UTP2012Z Datasheet
Additional preview pages of the UTP2012Z datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UTP2012Z Preliminary PNP EPITAXIAL SILICON TRANSISTOR 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR  DESCRIPTION The UTP2012Z is an PNP low VCE(SAT) Breakthrough In Small Signal (BISS) transistor in a medium power. NPN complement: UTN2010Z.
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