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UTP2012Z - 60V PNP TRANSISTOR

General Description

The UTP2012Z is an PNP low VCE(SAT) Breakthrough In Small Signal (BISS) transistor in a medium power.

NPN complement: UTN2010Z.

Key Features

  • S.
  • Very low collector-emitter saturation voltage VCE(SAT).
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • High energy efficiency due to less heat generation.
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UTP2012Z Preliminary PNP EPITAXIAL SILICON TRANSISTOR 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR  DESCRIPTION The UTP2012Z is an PNP low VCE(SAT) Breakthrough In Small Signal (BISS) transistor in a medium power. NPN complement: UTN2010Z.