UTP2012Z Description
The UTP2012Z is an PNP low VCE(SAT) Breakthrough In Small Signal (BISS) transistor in a medium power.
UTP2012Z Key Features
- Very low collector-emitter saturation voltage VCE(SAT)
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High energy efficiency due to less heat generation
- ORDERING INFORMATION
- MARKING
- ABSOLUATE MAXIUM RATINGS (TA= 25°C, unless otherwise specified)
- 65 ~ +150