Unisonic Technologies UTP2012Z
The UTP2012Z is an PNP low VCE(SAT) Breakthrough In Small Signal (BISS) transistor in a medium power.| Part No. | UTP2012Z |
|---|---|
| Datasheet | UTP2012Z Download |
| Manufacturer |  Unisonic Technologies |
| Description | 60V PNP TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
NPN complement: UTN2010Z.●
FEATURES
* Very low collector-emitter saturation voltage VCE(SAT) * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High energy efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors● ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTP2012ZL-AB3-R UTP2012ZG-AB3-R Note: Pin Assignment: B: Base C: Collector E: Emitter Package SOT-89 1 SOT-89 Pin Assignment 123 BCE Packing Tape Reel UTP2012ZG-AB3-R (1)Packing Type (2)Package Type (3)Green Package (1) R: Tape Reel (2) AB3: SOT-89 (3) G: Halogen Free and Lead Free, L: Lead Free
● MARKING 2012Z Date Code L: Lead Free G: Halogen Free Copyright © 2020 Unisonic Technologies Co., Ltd 1 of 3 QW-R223-030.b UTP2012Z Preliminary PNP EPITAXIAL SILICON TRANSISTOR
● ABSOLUATE MAXIUM RATINGS (TA= 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VC...
