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UTT15N10 - 100V N-CHANNEL MOSFET

General Description

The UTC UTT15N10 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as high current switching applications.

Key Features

  • RDS(ON) ≤ 125 mΩ @ VGS=10V, ID=7.5A RDS(ON) ≤ 150 mΩ @ VGS=4.5V, ID=7.5A.
  • Low on-state resistance.
  • Built-in gate protection diode.
  • High Switching Speed.
  • High Power and Current Handling Capability.
  • SYMBOL 2.Drain 1 1 Power MOSFET TO-220 TO-251 TO-252 1.Gate 3.Source.

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Full PDF Text Transcription for UTT15N10 (Reference)

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UNISONIC TECHNOLOGIES CO., LTD UTT15N10 15A, 100V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC UTT15N10 uses UTC’s advanced proprietary, planar stripe, DMOS technology ...

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15N10 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as high current switching applications.  FEATURES * RDS(ON) ≤ 125 mΩ @ VGS=10V, ID=7.5A RDS(ON) ≤ 150 mΩ @ VGS=4.5V, ID=7.5A * Low on-state resistance * Built-in gate protection diode * High Switching Speed * High Power and Current Handling Capability  SYMBOL 2.Drain 1 1 Power MOSFET TO-220 TO-251 TO-252 1.Gate 3.