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UTT15N10 - 100V N-CHANNEL MOSFET

Datasheet Summary

Description

The UTC UTT15N10 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as high current switching applications.

Features

  • RDS(ON) ≤ 125 mΩ @ VGS=10V, ID=7.5A RDS(ON) ≤ 150 mΩ @ VGS=4.5V, ID=7.5A.
  • Low on-state resistance.
  • Built-in gate protection diode.
  • High Switching Speed.
  • High Power and Current Handling Capability.
  • SYMBOL 2.Drain 1 1 Power MOSFET TO-220 TO-251 TO-252 1.Gate 3.Source.

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Datasheet preview – UTT15N10

Datasheet Details

Part number UTT15N10
Manufacturer UTC
File Size 252.85 KB
Description 100V N-CHANNEL MOSFET
Datasheet download datasheet UTT15N10 Datasheet
Additional preview pages of the UTT15N10 datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UTT15N10 15A, 100V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC UTT15N10 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as high current switching applications.  FEATURES * RDS(ON) ≤ 125 mΩ @ VGS=10V, ID=7.5A RDS(ON) ≤ 150 mΩ @ VGS=4.5V, ID=7.5A * Low on-state resistance * Built-in gate protection diode * High Switching Speed * High Power and Current Handling Capability  SYMBOL 2.Drain 1 1 Power MOSFET TO-220 TO-251 TO-252 1.Gate 3.
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